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    Please use this identifier to cite or link to this item: http://asiair.asia.edu.tw/ir/handle/310904400/11565

    Title: Structure and optoelectronic properties of p-type CuCrO2 thin films prepared by magnetron cosputtering deposition
    Authors: Wei-Fu Weng
    Contributors: Department of Photonics and Communication Engineering
    Keywords: CuAlO2;Transparent conducting oxide;Semiconductor
    Date: 2011
    Issue Date: 2011-09-30 09:08:42 (UTC+8)
    Publisher: Asia University
    Abstract: The copper chromium oxide films were prepared by dc reactive magnetron co-sputtering technique. After deposition, the films were annealed under Ar atmosphere in a tube furnace. The structure and optoelectronic properties of the Cu-Cr-O films were characterized by means of X-ray diffraction (XRD), field-emission transmission electron microscopy (FETEM), UV-VIS spectroscopy and Hall effect measurement. The copper chromium oxide films were investigated as a function of chromium target working power. As the chromium content increasing, CuO phases are reduced to nonexistence in the CuCrO2 films. The transmission of the single-phase CuCrO2 film to the 600 nm visible light was 60 %. The direct band gap of the film was 3.05 eV. Hall effect measurement revealed that the CuCrO2 film belonged to the p-type conduction category, with a carrier concentration of 7.49x1016 cm-3, the mobility of 0.279 cm2 /V-s and the resistance value was 298.3 Ω-cm.
    Appears in Collections:[光電與通訊學系] 博碩士論文

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