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    Please use this identifier to cite or link to this item: http://asiair.asia.edu.tw/ir/handle/310904400/11943


    Title: 退火溫度對銅鋅錫硫(Cu2ZnSnS4)薄膜結構和光電特性影響
    Authors: 嚴孟君
    Contributors: 游瑞松;黃鵲容
    亞洲大學光電與通訊學系碩士班
    Keywords: 溶膠凝膠法;鋅黃錫礦結構;光電性質;晶體結構
    Date: 2012
    Issue Date: 2012-11-14 19:25:24 (UTC+8)
    Abstract: 本研究以溶膠凝膠法製備銅鋅錫硫Cu2ZnSnS4 (CZTS)薄膜於石英玻璃基板上,以控制氬氣氛退火處理250 ℃~350 ℃恆溫1小時,研究退火溫度改變對於CZTS之薄膜晶體結構、表面形貌、斷面結構、化學成分、光學及電學性質影響;研究顯示在不同退火溫度薄膜結構均為鋅黃錫礦結構(Kestenite-Cu2ZnSnS4)並無二次相生成,隨著退火溫度的增加,薄膜平均晶粒尺寸增加,薄膜片狀及纖維狀微結構成長加大,溫度增加造成薄膜中的硫含量下降;退火溫度325 ℃之CZTS薄膜有較佳之吸收係數為最高約為0.94×104 cm-1,電阻率及直接能係為4.35 Ω cm及1.39 eV;退火溫度300 ℃之CZTS薄膜具有較低電阻率3.92 Ω cm,直接能隙值約為1.43 eV。
    Appears in Collections:[光電與通訊學系] 博碩士論文

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