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    ASIA unversity > 資訊學院 > 資訊工程學系 > 會議論文 >  Item 310904400/13573

    Please use this identifier to cite or link to this item: http://asiair.asia.edu.tw/ir/handle/310904400/13573

    Title: Analysis of LDMOS for Effect of Finger and Device-width on Gate Feedback
    Authors: 楊紹明;Yang, Shao-Ming;許健;Sheu, Gene
    Contributors: 資訊工程學系
    Keywords: "Gate Feedback Charge;Switching time;Number of Fingers;Device-width Effects."
    Date: 2012-08
    Issue Date: 2012-11-22 17:15:44 (UTC+8)
    Abstract: "In this paper, we have simulated and analyzed the
    effect of fingers, device-width and main power supply (Vdd) on
    gate feedback charge (Qgd) and switching time of LDMOS by
    gate charge test circuit simulation. Gate feedback charge is the
    charge which is required to fill the gate-drain “Miller”
    capacitance. Smaller area will have smaller charge and switching
    time. It has been seen in our simulation that gate feedback
    charge (Qgd) and switching time increased more linearly with
    device width rather than no. of fingers and main power supply
    (Vdd). We have successfully simulated that to improve the
    device’s power by increased the area, multi finger design is
    better than the width extension due to the lower gate feedback
    charge and faster switching time."
    Relation: 2012 International Conference on Optoelectronics and Microelectronics (ICOM)
    Appears in Collections:[資訊工程學系] 會議論文

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