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    Please use this identifier to cite or link to this item: http://asiair.asia.edu.tw/ir/handle/310904400/17033


    Title: Interface Trap Distribution for HCI Reliability Assessment on Bend Gate Structure by 3D TCAD Simulation
    Authors: 高立學;Gau, Li-Shiue
    Contributors: 休閒與遊憩管理學系
    Keywords: "Bend gate;hot carrier injection;3D TCAD;interface trap. "
    Date: 2012-09
    Issue Date: 2012-11-23 17:19:41 (UTC+8)
    Abstract: "This paper demonstrates electrical degradation due to
    hot carrier injection (HCI) stress for devices with different bend
    gate structures by three-dimensional (3D) TCAD simulation. The
    amount and distribution of Si/SiO2 interface trap under different
    stress conditions were also evaluated by 3D simulation for the first
    time. Trap-related models were employed to perform accurate
    physics phenomena during the HCI stress test. Compared with
    conventional strip gate device, device with bend gate structure
    suffer from higher interface trap generation after stress, leading to
    worse on-state resistance (RON) and drain current degradations."
    Relation: International Symposium on the Physical and Failure Amalysis of Integrated Circuits
    Appears in Collections:[休閒與遊憩管理學系] 期刊論文

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