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    ASIA unversity > 資訊學院 > 光電與通訊學系 > 期刊論文 >  Item 310904400/17135

    Please use this identifier to cite or link to this item: http://asiair.asia.edu.tw/ir/handle/310904400/17135

    Title: Structure and optoelectronic properties of multi-element oxide thin film
    Authors: 游瑞松;Yu, Ruei-Sung
    Contributors: 光電與通訊學系
    Keywords: Structure;Optoelectronic properties;Semiconductor;Transparent conducting oxide;Multi-element oxide
    Date: 2011-03
    Issue Date: 2012-11-26 10:22:24 (UTC+8)
    Abstract: This paper focuses on analyzing structural and optoelectronic properties of (ZnSnCuTiNb)1 − xOx films. The results of XRD and HRTEM indicate that the (ZnSnCuTiNb)1 − xOx films are all of amorphous without any multi-phase structure. XPS analysis confirms that the increase of the oxygen content makes the cations electron binding energy higher, suggesting the removal of valence electrons or the extent of oxidation can change the optoelectronic properties of the films. The (ZnSnCuTiNb)1 − xOx films possess the characteristics of optoelectronic semiconductor whose oxygen content are 51.6 and 56 atom%. These films have carrier concentrations of 2.62 × 1020 and 1.37 × 1017 cm−3, and conductivities (σ) of 57.2 and 9.45 × 10−3 (Ω cm)−1, and indirect band gaps of 1.69 and 2.26 eV, respectively. They are n-type oxide semiconductors.
    Appears in Collections:[光電與通訊學系] 期刊論文

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