ASIA unversity:Item 310904400/17139
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    題名: Characterization and optoelectronic properties of p-type N-doped CuAlO2 films
    作者: 游瑞松;Yu, Ruei-Sung;梁仕昌;S.C.Liang;盧志榮;C.J.Lu;蔡篤承;D.C.Tasi;薛富盛;F.S.Shieu*
    貢獻者: 光電與通訊學系
    日期: 2007-05
    上傳時間: 2012-11-26 10:22:27 (UTC+8)
    摘要: This letter reports a technique for increasing the carrier concentration and the conductivity of the p-type CuAlO2 through doping the material with nitrogen. The x-ray photoelectron spectroscopy and the optical band gap analyses suggested that the nitrogen atoms occupying the interstitial sites of the delafossite structure provided the p-type CuAlO2 with an impurity energy level in the energy gap. It was also found that the N-doped CuAlO2 film had its optimum conduction properties when the dopant level reached 1.1 at. %. Here, the carrier concentration was raised from 4.81×1016 in the undoped film to 2.13×1017 cm-3 in the doped film, and the corresponding film’s conductivity was increased from 3.8×10-2 to 5.4×10-2 (Ω cm)-1, as compared with the undoped CuAlO2 film.
    關聯: APPLIED PHYSICS LETTERS
    顯示於類別:[光電與通訊學系] 期刊論文

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