English  |  正體中文  |  简体中文  |  Items with full text/Total items : 90069/105176 (86%)
Visitors : 6551617      Online Users : 561
RC Version 6.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    ASIA unversity > 資訊學院 > 資訊工程學系 > 期刊論文 >  Item 310904400/18494


    Please use this identifier to cite or link to this item: http://asiair.asia.edu.tw/ir/handle/310904400/18494


    Title: Improved AMOLED with aligned poly-Si thinfilm transistors by laser annealing and chemical solution treatments
    Authors: 陳兆南;Chen, Chao-Nan
    Contributors: 資訊工程學系
    Keywords: AMOLED;Polycrystalline silicon;Thin-film transistor
    Date: 2012
    Issue Date: 2012-11-26 13:54:21 (UTC+8)
    Abstract: Low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFT) were prepared for the active-matrix organic light-emitting displays (AMOLED). The excimer laser annealing (ELA) recrystallization technique was employed with a chemical solution treatment process to improve the TFT characteristic uniformity and the AMOLED display image quality. The characteristics of the poly-Si array thin films were influenced by XeCl ELA optic module design, TFT device channel direction, and laser irradiation overlap ratio. The ELA system module provided aligned poly-Si grain size of 0.3 μm by the homogenization lens design. The chemical solution treatment process included a dilute HF solution (DHF), ozone (O3) water, and buffer oxide etching solution (BOE). The PMOS TFT showed better field effect mobility of 87.6 cm2/V s, and the threshold voltage was −1.35 V. The off current (Ioff) was 1.25×10−11 A, and the on/off current ratio was 6.27×106. In addition, the image quality of the AMOLED display was highly improved using the 2T1C structure design without any compensation circuit.
    Relation: Physica B: Condensed Matter;404(23–24):4649–4652
    Appears in Collections:[資訊工程學系] 期刊論文

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML82View/Open


    All items in ASIAIR are protected by copyright, with all rights reserved.


    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback