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    Title: Improved AMOLED with aligned poly-Si thinfilm transistors by laser annealing and chemical solution treatments
    Authors: 陳兆南;Chen, Chao-Nan
    Contributors: 資訊工程學系
    Keywords: AMOLED;Polycrystalline silicon;Thin-film transistor
    Date: 2012
    Issue Date: 2012-11-26 13:54:21 (UTC+8)
    Abstract: Low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFT) were prepared for the active-matrix organic light-emitting displays (AMOLED). The excimer laser annealing (ELA) recrystallization technique was employed with a chemical solution treatment process to improve the TFT characteristic uniformity and the AMOLED display image quality. The characteristics of the poly-Si array thin films were influenced by XeCl ELA optic module design, TFT device channel direction, and laser irradiation overlap ratio. The ELA system module provided aligned poly-Si grain size of 0.3 μm by the homogenization lens design. The chemical solution treatment process included a dilute HF solution (DHF), ozone (O3) water, and buffer oxide etching solution (BOE). The PMOS TFT showed better field effect mobility of 87.6 cm2/V s, and the threshold voltage was −1.35 V. The off current (Ioff) was 1.25×10−11 A, and the on/off current ratio was 6.27×106. In addition, the image quality of the AMOLED display was highly improved using the 2T1C structure design without any compensation circuit.
    Relation: Physica B: Condensed Matter;404(23–24):4649–4652
    Appears in Collections:[Department of Computer Science and Information Engineering] Journal Artical

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