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    ASIA unversity > 資訊學院 > 資訊工程學系 > 期刊論文 >  Item 310904400/18711

    Please use this identifier to cite or link to this item: http://asiair.asia.edu.tw/ir/handle/310904400/18711

    Title: An 800 Volts High Voltage Interconnection Level
    Authors: 許健;Sheu, Gene;楊紹明;Yang, Shao-Ming
    Contributors: 資訊工程學系
    Date: 2011-07
    Issue Date: 2012-11-26 13:57:27 (UTC+8)
    Abstract: An 800V LDMOS high voltage level shifter circuit using Floating Poly Field Plate (FPFP) method is proposed in this paper. In conventional structure, breakdown voltage drops for almost 65-70% from the original breakdown while crossing the High Voltage Interconnection (HVI) metal line over the high-voltage p-n junction. Compared to the conventional method, FPFP method would drastically reduce the influence of the interconnection, from 67% to less than 10% Furthermore, the study of HVI effect, different FPFP design scheme, FPFP length variation, and mask design layout consideration will be discussed in this paper.
    Relation: tencon 2010
    Appears in Collections:[資訊工程學系] 期刊論文

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