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    ASIA unversity > 資訊學院 > 資訊工程學系 > 期刊論文 >  Item 310904400/18764


    Please use this identifier to cite or link to this item: http://asiair.asia.edu.tw/ir/handle/310904400/18764


    Title: A 2?D Analytical Model of SOI High?voltage Devices with Dual Conduction Layers
    Authors: 許健;Sheu, Gene
    Contributors: 資訊工程學系
    Keywords: Dual conduction layers;Model;Reduced surface field;SOI
    Date: 2012-07
    Issue Date: 2012-11-26 13:58:14 (UTC+8)
    Abstract: By solving 2-D Poisson’s equation, a new analytical model to calculate the electric field distribution of a SOI RESURF device with Dual Conduction Layers (Dual-CL) is firstly proposed. The proposed model is also available for the single RESURF and triple RESURF SOI devices without any modification. A matrix equation is developed for the determination of the lateral and vertical breakdown voltages, in which the influences of the N-top layer, P-top layer, and the N-drift region are all considered. A unified RESURF criterion of single RESURF, triple RESURF, and Dual-CL SOI devices is further derived for optimizing the structure parameters. A good agreement between the analytical results and the numerical results shows that the N-top layer and P-top layer have opposite impacts on the breakdown performance of Dual-CL SOI devices. In addition, an optimal trade-off between the breakdown voltage and the specific on-resistance for the triple RESURF and Dual-CL SOI devices is obtained due to the incorporation of the P-top layer.
    Relation: IETE TECHNICAL REVIEW
    Appears in Collections:[資訊工程學系] 期刊論文

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