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    ASIA unversity > 資訊學院 > 資訊工程學系 > 期刊論文 >  Item 310904400/18837

    Please use this identifier to cite or link to this item: http://asiair.asia.edu.tw/ir/handle/310904400/18837

    Title: Hafnium Silicate Nanocrystal Memory Using Sol-Gel Spin Coating Method
    Authors: 遊信強;You, Hsin-Chiang
    Contributors: 資訊工程學系
    Date: 2006
    Issue Date: 2012-11-26 13:59:17 (UTC+8)
    Abstract: The authors fabricate the hafnium silicate nanocrystal memory for the first time using a very simple sol-gel-spin-coating method and 900 degC 1-min rapid thermal annealing (RTA). From the TEM identification, the nanocrystals are formed as the charge trapping layer after 900 degC 1-min RTA and the size is about 5 nm. They demonstrate the composition of nanocrystal is hafnium silicate from the X-ray-photoelectron-spectroscopy analysis. They verify the electric properties in terms of program/erase (P/E) speed, charge retention, and endurance. The sol-gel device exhibits the long charge retention time of 104 s with only 6% charge loss, and good endurance performance for P/E cycles up to 105
    Relation: IEEE Electron Device Letters
    Appears in Collections:[資訊工程學系] 期刊論文

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