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    ASIA unversity > 資訊學院 > 資訊工程學系 > 期刊論文 >  Item 310904400/18839


    Please use this identifier to cite or link to this item: http://asiair.asia.edu.tw/ir/handle/310904400/18839


    Title: PolySi-SiO2-ZrO2-SiO2-Si Flash Memory using Novel Sol-Gel ZrO2
    Authors: 遊信強;Hsin-Chiang You;Tzu-Hsiang Hsu;Fu-Hsiang Ko;Tan-Fu Lei
    Contributors: 資訊工程學系
    Date: 2012-11
    Issue Date: 2012-11-26 13:59:18 (UTC+8)
    Abstract: In this paper, we propose a method for depositing the charge trapping layer of a high-k polySi-SiO2-ZrO2-SiO2-Si (SOZOS) memory device. In this approach, the trapping layer was formed through simple two steps: (i) spin-coating of the ZrCl4 precursor and (ii) rapid thermal annealing for 1 min at 900 C under an oxygen atmosphere. The morphology of the ZrO2 charge trapping layer was confirmed through X-ray photoemission spectroscopy analysis. The sol-gel-derived layer exhibited improved charge trapping in the SOZOS memory device, resulting in a threshold voltage shift of 2.7 V in the I-d-V-g curve, P/E (program/erase) speeds as fast as 0.1 ms, good data retention up to 10(4) s (only a 5% charge loss due to deep trapping in the ZrO2 layer), and good endurance (no memory window narrowing after 10(5) P/E cycles). (c) 2006 The Electrochemical Society.
    Relation: Journal of the Electrochemical Society
    Appears in Collections:[資訊工程學系] 期刊論文

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