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    ASIA unversity > 資訊學院 > 資訊工程學系 > 期刊論文 >  Item 310904400/25368


    Please use this identifier to cite or link to this item: http://asiair.asia.edu.tw/ir/handle/310904400/25368


    Title: Taper angle of silicon nitride thin film control by laser direct pattern for transistors fabrication
    Authors: 陳兆南;Chen, Chao-Nan;Huang, Jung-;Huang, Jung-Jie;Wu, Gwo-Mei;Wu, Gwo-Mei;Chien, How-W;Chien, How-Wen
    Contributors: 資訊工程學系
    Keywords: Laser Direct Patterning;Silicon Nitride (SiNx);Taper Angle;Thin-Film Transistor (TFT)
    Date: 2013-01
    Issue Date: 2013-07-11 14:19:06 (UTC+8)
    Abstract: Silicon nitride (SiNx), an important material used as a dielectric layer and passivation layer in thin film transistor liquid crystal display (TFT LCD) was patterned by a non-lithographic process. SiNx was deposited by plasma enhanced chemical vapor deposition (PECVD) on glass substrate. Laser photoablation can effectively pattern 5 µm diameter with 200 nm depth hole in SiNx thin films with laser photoablation. The threshold remove fluence is 1350 mJ/cm2 with 1 laser irradiation shot. The contact-hole taper angle as a function of the laser irradiation shot number. The taper angle increased with increasing the laser irradiation shot number. The contact-hole taper angle etched profile was successfully controlled by vary the laser irradiation shot number.
    Relation: Applied Mechanics and Materials, Volumes 284 - 287 : 225-229
    Appears in Collections:[資訊工程學系] 期刊論文

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