English  |  正體中文  |  简体中文  |  Items with full text/Total items : 90570/105786 (86%)
Visitors : 16378327      Online Users : 328
RC Version 6.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    ASIA unversity > 資訊學院 > 資訊工程學系 > 期刊論文 >  Item 310904400/25370

    Please use this identifier to cite or link to this item: http://asiair.asia.edu.tw/ir/handle/310904400/25370

    Title: Effect of Electrical and Mechanical Stresses of Low Temperature a-Si:H TFTs Fabricated on Polyimide and Glass Substrates
    Authors: 黃俊杰;Huang, Jung-Jie;陳兆南;Chen, Chao-Nan
    Contributors: 資訊工程學系
    Date: 2013-02
    Issue Date: 2013-07-11 14:19:09 (UTC+8)
    Abstract: Hydrogenated amorphous silicon thin film transistors (TFTs) were fabricated by plasma enhanced chemical vapor deposition on both transparent polyimide and glass substrate. The electrical characteristics and surface morphology of a-Si:H/SiNx:H films on polyimide and glass substrate were compared. TFTs fabricated on polyimide substrate show better electrical performance than on glass substrate. Moreover, the threshold voltage shift of TFTs on polyimide substrate is smaller than those TFTs on glass. The similar trend is also found either under electrical stress or 0.2% mechanical strain. The superior electrical characteristics of TFTs on polyimide substrate than that on glass substrate were attributed to the better surface morphology of a-Si:H/SiNx:H film on polyimide.
    Relation: Thin Solid Films
    Appears in Collections:[資訊工程學系] 期刊論文

    Files in This Item:

    There are no files associated with this item.

    All items in ASIAIR are protected by copyright, with all rights reserved.

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback