ASIA unversity:Item 310904400/25370
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    ASIA unversity > 資訊學院 > 資訊工程學系 > 期刊論文 >  Item 310904400/25370


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    题名: Effect of Electrical and Mechanical Stresses of Low Temperature a-Si:H TFTs Fabricated on Polyimide and Glass Substrates
    作者: 黃俊杰;Huang, Jung-Jie;陳兆南;Chen, Chao-Nan
    贡献者: 資訊工程學系
    日期: 2013-02
    上传时间: 2013-07-11 14:19:09 (UTC+8)
    摘要: Hydrogenated amorphous silicon thin film transistors (TFTs) were fabricated by plasma enhanced chemical vapor deposition on both transparent polyimide and glass substrate. The electrical characteristics and surface morphology of a-Si:H/SiNx:H films on polyimide and glass substrate were compared. TFTs fabricated on polyimide substrate show better electrical performance than on glass substrate. Moreover, the threshold voltage shift of TFTs on polyimide substrate is smaller than those TFTs on glass. The similar trend is also found either under electrical stress or 0.2% mechanical strain. The superior electrical characteristics of TFTs on polyimide substrate than that on glass substrate were attributed to the better surface morphology of a-Si:H/SiNx:H film on polyimide.
    關聯: Thin Solid Films
    显示于类别:[資訊工程學系] 期刊論文

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