CuCrO2 is a p-type transparent conducting semiconductor which is composed of non-noble metal oxide, thus having high application values. This project will investigate the effects of extrinsic doping elements on CuCrO2 films. In the first year of this two-stage project, we will focus on identifying the intrinsic properties of CuCrO2 films, and analyzing how trivalent Al, In, Ga and Fe impact as doping elements for CuCr1-XMXO2 films, how bivalent Zn impacts as a doping element for CuCrO2: Zn films, how non-metal N affects as a doping element for CuCrO2: N films; thereby extensively studying the changes in structural and optoelectronic properties of CuCrO2 caused by extrinsic doping elements, and developing theories for doping effects of CuCrO2 films. The goal will be set to use suitable elements for doping to alter the structural and optoelectronic properties of these semiconductor materials, and will be to investigate the extrinsic doping CuCrO2 films with high transmission and electrical conductivity. In the second year, the subsequent research will be based on the theories for doping effects of CuCrO2 films established in the previous year, and further optimizing the structural and optoelectronic properties of CuCrO2. The p-n diode will be prepared by deposing n-type transparent conducting film on the extrinsic doping p-type CuCrO2 film. The focus of this stage will be on interface treatments and materials matching for p-n diodes, with further efforts in checking the structural, optical and electrical properties of the resulting devices.