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    Please use this identifier to cite or link to this item: http://asiair.asia.edu.tw/ir/handle/310904400/412


    Title: 800V新型高壓元件
    A Novel Device for 800V Ultra-High Voltage LDMOS
    Authors: 張怡楓
    Contributors: 資訊工程學系碩士班
    Date: 2009
    Issue Date: 2009-10-09 16:38:37 (UTC+8)
    Publisher: 亞洲大學
    Abstract: 近年來,由於平面顯示器和通訊產品的推陳出新,使得功率元件的需求大幅增加。為了順應電路積體化的潮流,功率元件必須擔負兩大責任,一為承受高工作電壓,另一為具有較小的導通電阻。
    本文首先提出了一個利用二維帕松(Poisson's )方程式解析方法來預測電壓及電場分佈趨勢,並針對JI(Junction Isolation
    )跟Thick SOI 不同的結構,使用2-D半導體元件模擬工具MEDICI對解析方法進行驗證。
    另外提出Buried P-ring LDMOSFET為RESURF LDMOSFET 的一種改良版,藉由加大RESURF 效果與提昇磊晶層濃度, 可以使得其元件性能高於傳統的RESURF LDMOSFET。
    Appears in Collections:[資訊工程學系] 博碩士論文

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