Ion implantation is a standart doping technique for semiconductor material. For shallow junction device, accurate predictions of ion implantation profiles are essential for process development and device characterization. For this purpose, accurate prediction of the doping profiles resulted from ion implantation will be studied using a few models of ion implantation. We collected data of BF2 as P-type ion implantation profiles using TCAD simulation software with different model of ion implantation and compared with Secondary Ion Mass Spectrometry (SIMS) data of ion implantation profile database as experimental data.
Relation:
IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
