ASIA unversity:Item 310904400/64381
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    题名: Low-voltage high-speed programming/erasing floating-gate memory device with gate-all-around polycrystalline silicon nanowire
    作者: 李克慧;Ko-Hui Lee;蔡宗叡;Jung-Ruey Tsai;張睿達;Ruey-Dar Chang;林鴻志;Horng-Chih Lin;黃調元;Tiao-Yuan Huang
    贡献者: 光電與通訊學系
    关键词: elemental semiconductors;flash memories;nanoelectronics;nanofabrication;nanowires;silicon
    日期: 2013-10
    上传时间: 2013-11-01 10:14:42 (UTC+8)
    摘要: A gate-all-around polycrystalline silicon nanowire (NW) floating-gate (FG) memory device was fabricated and characterized in this work. The cross-section of the NW channels was intentionally made to be triangular in shape in order to study the effects of the corners on the device operation. Our results indicate that the channel corners are effective in lowering the programming and erasing (P/E) operation voltages. As compared with the charge-trapping type devices, a larger memory window is obtained with the FG scheme under low-voltage P/E conditions. A model considering the nature of the charge storage medium is proposed to explain the above findings.
    關聯: Applied Physics Letters, Volume:103 ,Issue: 15
    显示于类别:[光電與通訊學系] 期刊論文

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