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    ASIA unversity > 資訊學院 > 資訊工程學系 > 會議論文 >  Item 310904400/79150

    Please use this identifier to cite or link to this item: http://asiair.asia.edu.tw/ir/handle/310904400/79150

    Title: Dependence of Breakdown Voltage on Drift Length and Linear Doping Gradients in SOI RESURF LDMOS Devices
    Authors: 楊紹明;Yang, Shao-Ming;許健;Sheu, Gene
    Contributors: 資訊工程學系
    Keywords: SOI;Breakdown voltage;variation of lateral doping;LDMOS.
    Date: 2009.08
    Issue Date: 2013-12-26 19:06:56 (UTC+8)
    Abstract: An optimal variation in lateral doping profiles is proposed for the drift region of lateral power devices in partial SOI technology in order to achieve breakdown voltage above 200 V for both off-state and on-state operations. LDMOS structure incorporating the proposed optimal doping profile are analyzed for their electrical characteristics and compared with conventional uniformly doped partial SOI and thin layer SOI by extensive 2D numerical simulations using MEDICI. The results indicate that the proposed optimal doping profile is in good agreement with the optimal doping gradient for JI technology. The optimal doping profile can significantly improve the trade-off between breakdown voltage and specific on-resistance in comparison to uniformly doped P-SOI.
    Relation: The International Conference on Electronic Measurement & Instruments (ICEMI)
    Appears in Collections:[資訊工程學系] 會議論文

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