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    ASIA unversity > 資訊學院 > 光電與通訊學系 > 期刊論文 >  Item 310904400/79485


    Please use this identifier to cite or link to this item: http://asiair.asia.edu.tw/ir/handle/310904400/79485


    Title: Structure, composition and properties of p-type CuCrO2 thin films
    Authors: 游瑞松;Ruei-Sung Yu;蔡崇平;Chorng-Pyng Tasi
    Contributors: 光電與通訊學系
    Keywords: Copper–chromium oxide;Semiconductor;Chemical composition;Band gap;Resistivity
    Date: 2014-01
    Issue Date: 2014-06-03 18:55:06 (UTC+8)
    Abstract: In this study, correlations between composition, structural and optoelectronic properties of the p-type CuCrO2 film are discussed. The film crystal structures can be altered from composite to single phase by adjusting the Cu, Cr and O contents. The appropriate composition is a dominant factor for the formation of pure phase CuCrO2, and the content discrepancy between the Cu and Cr should be equal to, or lower than, 2.6 at% in the material. A higher stoichiometric ratio of oxygen is necessary to stabilize the structure of delafossite and is responsible for p-type electrical conductivity. CuCrO2 has a continuously bonded polygonal microstructure. Intrinsic CuCrO2 is a transparent wide band gap semiconductor, in which the transmittance is 68% at visible wavelength of 550 nm. Higher incident photon energy can cause subband transition in CuCrO2. The direct band gap of the CuCrO2 film is 3.17 eV, and with lower resistivity of 2.35 Ωcm.
    Relation: CERAMICS INTERNATIONAL,40(6),8211–8217.
    Appears in Collections:[光電與通訊學系] 期刊論文

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