ASIA unversity:Item 310904400/79490
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    Please use this identifier to cite or link to this item: http://asiair.asia.edu.tw/ir/handle/310904400/79490


    Title: A Gate-All-Around Floating-Gate Memory Device with Triangular-Shaped Poly-Si Nanowire Channels
    Authors: 蔡宗叡;TSAI,JUNG-RUEY*;李克慧Lee, Ko-Hui Lee;林鴻志Lin, Horng-Chih;黃調元;Huang, Tiao-Yuan
    Contributors: 光電與通訊學系
    Date: 2014-03
    Issue Date: 2014-06-03 18:55:47 (UTC+8)
    Relation: Japanese Journal of Applied Physics
    Appears in Collections:[Department of Photonics and Communication Engineering] Journal Article

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