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    Title: A Gate-All-Around Floating-Gate Memory Device with Triangular-Shaped Poly-Si Nanowire Channels
    Authors: 蔡宗叡(TSAI, JUNG-RUEY)*、李克慧(Lee, Ko-Hui Lee)、林鴻志(Lin, Horng-Chih)、黃調元(Huang, Tiao-Yuan)
    Contributors: 光電與通訊學系
    Date: 2014-03
    Issue Date: 2014-06-05 12:20:45 (UTC+8)
    Abstract: A novel gate-all-around (GAA) poly-Si floating-gate (FG) memory device with triangular nanowire (NW) channels was fabricated and characterized in this work. The enhanced electric field around the corners of the NW channels boosts more electrons tunneling through the tunnel oxide layer during programming and erasing (P/E) processes, and thus the operation voltage markedly decreases. Furthermore, the nonlocalized trapping feature characteristic of the FG makes the injection of electrons easier during the programming operation, which was demonstrated by technology computer-aided design (TCAD) simulations.
    Relation: Japanese Journal of Applied Physics
    Appears in Collections:[Department of International Business] Journal Artical

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