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    Please use this identifier to cite or link to this item: http://asiair.asia.edu.tw/ir/handle/310904400/80684


    Title: 濺鍍沉積與常壓微波電漿製備銅鉻氧化物薄膜及其光電性質研究
    Authors: 王明哲
    Contributors: 光電與通訊學系
    Keywords: 磁控濺鍍
    常壓微波電漿
    薄膜
    結構
    光電性質
    Date: 2014-07-31
    Issue Date: 2014-09-03 09:47:02 (UTC+8)
    Publisher: Asia University
    Abstract: 本研究使用磁控濺鍍及常壓微波電漿處理製備 CuCrO2 薄膜,分析探討薄膜之晶體結構、微結構及光電性質。濺鍍沉積初始薄膜,再以微波電漿能量使薄膜相變化,材料的結構可由非晶質 Cu-Cr-O 轉變成為 CuCrO2及 CuCr2O4複合相結構。吸收電漿能量之薄膜的厚度愈小其平均晶粒愈大,薄膜的斷面為多邊形緻密堆積結構。薄膜的吸收係數均為 104至 105 cm-1,膜厚的減少以及晶粒尺寸的增加有助於提昇薄膜的透光率。薄膜中的直接能隙為受到內部氧含量及二次相CuCr2O4的影響,CuCrO2及CuCr2O4複合相薄膜最小能隙值為2.94 eV,最大能隙值為 3.07 eV。薄膜的電學性質受於載子濃度以及移動率所支配, CuCrO2及 CuCr2O4複合相薄膜最低電阻率為 31.97 Ω cm,霍爾係數為+82.3 cm3/C,薄膜為 p 型半導體材料。
    Appears in Collections:[光電與通訊學系] 博碩士論文

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