In this study, preparation of CuCrO2 films was using magnetron sputtering and atmospheric pressure microwave plasma treatment. The crystal structure, microstructure and optoelectronic properties were investigated. For plasma treatment imposed, the amorphous as-deposited Cu-Cr-O structure transferred into CuCr2O4 and CuCrO2 composite phase. The lower thickness of film had larger average grain size. The cross section of the film revealed a polygonal-like feature with closed-packed state. Absorption coefficients of the oxide films were 104- 105 cm-1. It is clear that the decreasing thickness and increasing grain size of the film contribute to improve the transmittance. The higher and lower band gaps of composite phase films were 2.94 and 3.07 eV, respectively. Carrier concentration and mobility are dominant factors for the film electrical properties. The composite phase film had a lower resistivity of 31.97 Ωcm, and Hall coefficient of +82.3 cm3/C. The films are p-type semiconductor.