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    ASIA unversity > 資訊學院 > 資訊工程學系 > 期刊論文 >  Item 310904400/8682


    Please use this identifier to cite or link to this item: http://asiair.asia.edu.tw/ir/handle/310904400/8682


    Title: A three-dimensional breakdown model of SOI lateral power transistors with a circular layout
    Authors: Guo, Yufeng;Wang, Zhigong;Sheu, Gene
    Contributors: Department of Computer Science and Information Engineering
    Keywords: Electric breakdown;Electric fields;Heterojunction bipolar transistors;Poisson distribution;Poisson equation;Power electronics;Simulators;Analytical results;Breakdown model;Breakdown voltage;Cathode region;Cylindrical coordinates;Design guidelines;Doping concentration;Drift regions;Electric field distributions;Experimental data;Medici simulations;Partially depleted;Power devices;Power transistors;Three dimensional space
    Date: 2009-11
    Issue Date: 2010-04-07 21:27:18 (UTC+8)
    Publisher: Asia University
    Abstract: This paper presents an analytical three-dimensional breakdown model of SOI lateral power devices with a circular layout. The Poisson equation is solved in cylindrical coordinates to obtain the radial surface potential and electric field distributions for both fully- and partially-depleted drift regions. The breakdown voltages for N+N and P+N junctions are derived and employed to investigate the impact of cathode region curvature. A modified RESURF criterion is proposed to provide a design guideline for optimizing the breakdown voltage and doping concentration in the drift region in three dimensional space. The analytical results agree well with MEDICI simulation results and experimental data from earlier publications. © 2009 Chinese Institute of Electronics.
    Relation: Journal of Semiconductors 20(11) :114006-1-4
    Appears in Collections:[資訊工程學系] 期刊論文

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