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    ASIA unversity > 資訊學院 > 資訊工程學系 > 期刊論文 >  Item 310904400/8696

    Please use this identifier to cite or link to this item: http://asiair.asia.edu.tw/ir/handle/310904400/8696

    Title: SONOS memories with embedded silicon nanocrystals in nitride
    Authors: Liu, Mei-Chun;Chiang, Tsung-Yu;Kuo, Po-Yi;Chou, Ming-Hong;Wu, Yi-Hong;You, Hsin-Chiang;Cheng, Ching-Hwa;Liu, Sheng-Hsien;Yang, Wen-Luh;Lei, Tan-Fu;Chao, Tien-Sheng
    Contributors: Department of Computer Science and Information Engineering
    Keywords: Nanostructured materials;Nitrides;Nonmetals;Silicon;Silicon nitride;Control devices;Memory windows;Retention time (RT);Silicon nanocrystals (Si-nc);Tunneling oxides
    Date: 2008
    Issue Date: 2010-04-07 21:27:27 (UTC+8)
    Publisher: Asia University
    Abstract: We have successfully demonstrated SONOS memories with embedded Si-NCs in silicon nitride. This new structure exhibits excellent characteristics in terms of larger memory windows and longer retention time compared to control devices. Using the same thickness 2.5 nm of the bottom tunneling oxide, we found that N<inf>2</inf>O is better than O<inf>2</inf> oxide. Retention property is improved when the thickness of N<inf>2</inf>O is increased to 3.0 nm. © 2008 IOP Publishing Ltd.
    Number of references:15
    Main heading:Data storage equipment
    Controlled terms:Nanostructured materials - Nitrides - Nonmetals - Silicon - Silicon nitride
    Uncontrolled terms:Control devices - Memory windows - Retention time (RT) - Silicon nanocrystals (Si-nc) - Tunneling oxides
    Classification code:549.3 Others, including Bismuth, Boron, Cadmium, Cobalt, Mercury, Niobium, Selenium, Silicon, Tellurium and Zirconium - 722.1 Data Storage, Equipment and Techniques - 761 Nanotechnology - 804 Chemical Products Generally - 804.2 Inorganic Compounds
    Compilation and indexing terms, Copyright 2009 Elsevier Inc.
    Relation: Semiconductor Science and Technology 23:075033
    Appears in Collections:[資訊工程學系] 期刊論文

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