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    ASIA unversity > 資訊學院 > 資訊工程學系 > 期刊論文 >  Item 310904400/8697

    Please use this identifier to cite or link to this item: http://asiair.asia.edu.tw/ir/handle/310904400/8697

    Title: Nanocrystallization and interfacial tension of sol-gel derived memory
    Authors: Wu, Chi-Chang;Tsai, Yi-Jen;Chu, Min-Ching;Yang, Shao-Ming;Ko, Fu-Hsiang;Liu, Pin-Lin;Yang, Wen-Luh;You, Hsin-Chiang
    Contributors: Department of Computer Science and Information Engineering
    Keywords: Interfacial energy;Nanocrystallization;Spin coating;Surface tension;Thin films;Annealing temperatures;Charge loss
    Date: 2008
    Issue Date: 2010-04-07 21:27:27 (UTC+8)
    Publisher: Asia University
    Abstract: We have successfully demonstrated SONOS memories with embedded Si-NCs in silicon nitride. This new structure exhibits excellent characteristics in terms of larger memory windows and longer retention time compared to control devices. Using the same thickness 2.5 nm of the bottom tunneling oxide, we found that N<inf>2</inf>O is better than O<inf>2</inf> oxide. Retention property is improved when the thickness of N<inf>2</inf>O is increased to 3.0 nm. © 2008 IOP Publishing Ltd.
    Relation: Applied Physics Letters 92(12):123111
    Appears in Collections:[資訊工程學系] 期刊論文

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