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    Please use this identifier to cite or link to this item: http://asiair.asia.edu.tw/ir/handle/310904400/91953

    Title: 利用液相沉積法製備氧化鋁鈍化層薄膜之研究
    Authors: 林品誠
    Contributors: 光電與通訊學系
    Keywords: 液相沉積法;氧化鋁;固定氧化層電荷;鈍化層
    Date: 2015
    Issue Date: 2015-10-08 09:27:09 (UTC+8)
    Publisher: 亞洲大學
    Abstract: 利用液相沉積法製備氧化鋁鈍化層薄膜在矽晶片(100)上進行研究,利用硫酸鋁和碳酸氫鈉沉積溶液來備製氧化鋁鈍化層,不同碳酸氫鈉的濃度去控制氧化鋁薄膜沉積積速率,在最佳有效的薄膜品質是在pH值3.3的溶液下,在氮氣退火500℃持溫30分鐘下其少數載子生命期、固定電荷為123.47 μs、-2.15×1012cm-2,此鈍化效果與空白矽晶片相比,少數生命載子增加了41倍。
    Appears in Collections:[光電與通訊學系] 博碩士論文

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