High Power Impulse Magnetron Sputtering (HIPIMS) is a newly developed coating technology based on the conventional Direct Current magnetron sputtering (DCMS), which is characterized for very short pulse width leading to peak power density reach several kW/cm. This mode not only provide the high metallic-ion density but also with high plasma density (1019 m-3). Therefore, this study used both deposition techniques of HIPIMS and DCMS to deposited Zirconium Nitride (ZrN) layer between the metal gate and dielectric layer on the MIS capacitor. In addition, we used different power and duty cycle to observe the target peak power density and properties of the ZrN thin films.
As the thesis result, we observed used of HIPIMS technology to deposited ZrN layer on MIS devices can acquire excellent characteristics than the DCMS technology. The result was demonstration of the crystallization, roughness and adhesion by XRD, AFM and Nanoindenter, respectively. Furthermore, the electrical properties of Interface trap density (Dit), dielectric constant (k), Flat band voltage shift (∆VFB) and Equivalent oxide thickness (EOT) were improved after RTA 800℃ annealing. Comparison characteristic of the HIPIMS and DCMS process, the HIPIMS process manifested the good performance of the electric properties than DCMS process. This illustrates HIPIMS technology was effectively improve the thin films properties during higher ionization and rich with metal ion plasma as deposition process.