English  |  正體中文  |  简体中文  |  Items with full text/Total items : 90069/105176 (86%)
Visitors : 6602790      Online Users : 598
RC Version 6.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version

    Please use this identifier to cite or link to this item: http://asiair.asia.edu.tw/ir/handle/310904400/91957

    Title: Fabrication and characterization of ZrN cap layer by high power impulse magnetron sputtering for metal gate-MIS applications
    Authors: Chen, Po-Jen
    Contributors: 光電與通訊學系
    Keywords: HIPIMS;ZrN;AFM;Dit
    Date: 2015
    Issue Date: 2015-10-08 09:35:03 (UTC+8)
    Publisher: 亞洲大學
    Abstract: High Power Impulse Magnetron Sputtering (HIPIMS) is a newly developed coating technology based on the conventional Direct Current magnetron sputtering (DCMS), which is characterized for very short pulse width leading to peak power density reach several kW/cm. This mode not only provide the high metallic-ion density but also with high plasma density (1019 m-3). Therefore, this study used both deposition techniques of HIPIMS and DCMS to deposited Zirconium Nitride (ZrN) layer between the metal gate and dielectric layer on the MIS capacitor. In addition, we used different power and duty cycle to observe the target peak power density and properties of the ZrN thin films.

    As the thesis result, we observed used of HIPIMS technology to deposited ZrN layer on MIS devices can acquire excellent characteristics than the DCMS technology. The result was demonstration of the crystallization, roughness and adhesion by XRD, AFM and Nanoindenter, respectively. Furthermore, the electrical properties of Interface trap density (Dit), dielectric constant (k), Flat band voltage shift (∆VFB) and Equivalent oxide thickness (EOT) were improved after RTA 800℃ annealing. Comparison characteristic of the HIPIMS and DCMS process, the HIPIMS process manifested the good performance of the electric properties than DCMS process. This illustrates HIPIMS technology was effectively improve the thin films properties during higher ionization and rich with metal ion plasma as deposition process.
    Appears in Collections:[光電與通訊學系] 博碩士論文

    Files in This Item:

    File Description SizeFormat

    All items in ASIAIR are protected by copyright, with all rights reserved.

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback