|Abstract: ||Magnetron Sputtering has been widely used in the process of preparing large area coating. Because of the high and steady sputtering rate and good uniformity of thin films. In addition, select the Indium Zinc Oxide (IZO) transparent conductive oxide films were deposited onto the glass substrate by magnetron sputtering method. Deposition was performed by changing processing conditions, such as oxygen gas flow, process pressure, argon gas flow and after deposition annealing. The structural, optical, electrical and Microstructure properties of IZO films have been characterized by X-ray diffraction, Atomic Force Microscope, Raman Spectroscope, Four Point probe, Hall Effect Measurement System, UV-VIS, Pole Figure, Ellipseometer, TEM, respectively.
In IZO process we first change the oxygen content, the resistivity of as low as 0.83×100 Ω•cm, transmittance of about 83 % can be seen in the XRD analysis of In2O3 (222) crystalline phase. Then change argon content resistivity as low as 5.47×10-3 Ω•cm, transmittance of about 80 %, the situation in the XRD analysis of non-crystalline. The last change process pressure resistivity as low as 7.88×10-4 Ω•cm, transmittance of about 81 %, the situation in the XRD analysis of non-crystalline.