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    Please use this identifier to cite or link to this item: http://asiair.asia.edu.tw/ir/handle/310904400/9563

    Title: Characterization and optoelectronic properties of p-type N-doped CuAlO2 films
    Authors: R. S. Yu;S. C. Liang;C. J. Lu;D. C. Tasi;F. S. Shieu
    Date: 2007-05
    Issue Date: 2010-05-12 09:12:21 (UTC+8)
    Publisher: Asia University
    Abstract: This letter reports a technique for increasing the carrier concentration and the conductivity of the p-type CuAlO2 through doping the material with nitrogen. The x-ray photoelectron spectroscopy and the optical band gap analyses suggested that the nitrogen atoms occupying the interstitial sites of the delafossite structure provided the p-type CuAlO2 with an impurity energy level in the energy gap. It was also found that the N-doped CuAlO2 film had its optimum conduction properties when the dopant level reached 1.1 at. %. Here, the carrier concentration was raised from 4.81×1016 in the undoped film to 2.13×1017 cm-3 in the doped film, and the corresponding film’s conductivity was increased from 3.8×10-2 to 5.4×10-2 (Ω cm)-1, as compared with the undoped CuAlO2 film.
    Relation: Applied physics letters 90(19):19117-19117-3
    Appears in Collections:[光電與通訊學系] 期刊論文

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