ASIA unversity:Item 310904400/95997
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 90570/105786 (86%)
Visitors : 16339542      Online Users : 301
RC Version 6.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version

    Please use this identifier to cite or link to this item:

    Title: A HSPICE Macro Model for the ESD Behavior of Gate Grounded NMOS and Gate coupled NMOS
    Authors: Yang), 楊紹明(Shao-Ming;EP), Hema EP(Hema;Sheu), 許健(Gene;Mrinal), Aryadeep Mri(Aryadeep;Amanullah), Md. Amanulla(Md.;Chen), 陳柏安(PA
    Contributors: 資訊工程學系
    Date: 2015-03
    Issue Date: 2015-12-11 13:47:59 (UTC+8)
    Relation: ECS Transactions
    Appears in Collections:[Department of Computer Science and Information Engineering] Journal Artical

    Files in This Item:

    There are no files associated with this item.

    All items in ASIAIR are protected by copyright, with all rights reserved.

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback