| [光電與通訊學系] 博碩士論文 |
2015-06 |
Reliability Analysis of Amorphous Silicon Thin-Film Transistors during Accelerated ESD stress |
蔡宗叡; TSAI, JUNG-RUEY; 楊紹明; Yang, Shao-Ming; 許健; Sheu, Gene; Cha, Ruey Dar; Chang, Ruey Dar; We, Ting Ting; Wen, Ting Ting |
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| [光電與通訊學系] 期刊論文 |
2015-06 |
International Symposium on the Physical and Failure Amalysis of Integrated Circuits |
楊紹明; Yang, Shao-Ming; 許健; Sheu, Gene |
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| [光電與通訊學系] 期刊論文 |
2012-09 |
Failure Analysis of Power MOSFETs based on Multi-finger Configuration under Unclamped Inductive Switching (UIS) Stress Condition |
楊紹明; Yang, Shao-Ming; 蔡宗叡; Tsai, Jung-Ruey; 許健; Sheu, Gene |
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| [光電與通訊學系] 期刊論文 |
2012-09 |
Analysis of LDMOS for Effect of Fingers, Device-Width and Inductance on reverse recovery |
蔡宗叡; Tsai, Jung-Ruey; 楊紹明; Yang, Shao-Ming; 許健; Sheu, Gene |
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| [光電與通訊學系] 期刊論文 |
2012-08 |
Analysis of LDMOS for Effect of Finger and Device-width on Gate Feedback Charge |
楊紹明; Yang, Shao-Ming; 蔡宗叡; Tsai, Jung-Ruey; 許健; Sheu, Gene |
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| [光電與通訊學系] 期刊論文 |
2012-03 |
A New Methodology to Investigate the Effect of Stress and Bias on 2DEG and Drain Current of AlGaN/GaN Based Heterostructure |
許健; Sheu, Gene; 蔡宗叡; Tsai, Jung-Ruey; 楊紹明; Yang, Shao-Ming |
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| [光電與通訊學系] 期刊論文 |
2012-03 |
A New Methodology to Investigate the Effect of Stress and Bias on 2DEG and Drain Current of AlGaN-GaN Based Heterostructure |
許健; Sheu, Gene; 蔡宗叡; Tsai, Jung-Ruey; 楊紹明; Yang, Shao-Ming |
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| [光電與通訊學系] 期刊論文 |
2012-03 |
Optimization of nLDMOS ruggedness under Unclamped Inductive Switching (UIS) stress conditions by poly-gate extension |
蔡宗叡; Tsai, Jung-Ruey; 許健; Sheu, Gene; 楊紹明; Yang, Shao-Ming |
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| [光電與通訊學系] 期刊論文 |
2012-03 |
Analysis of LDMOS for Effect of Fingers, Device-Width and Inductance (Load) on Reverse Recovery |
蔡宗叡; Tsai, Jung-Ruey; 楊紹明; Yang, Shao-Ming; 許健; Sheu, Gene |
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| [光電與通訊學系] 期刊論文 |
2011-11 |
Design of Multiple RESURF LDMOS with P-top rings and STI regions in 65nm CMOS Technology |
許健; Sheu, Gene; 楊紹明; Yang, Shao-Ming; 蔡宗叡; Tsai, Jung-Ruey |
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| [光電與通訊學系] 期刊論文 |
2011-11 |
Self-Consistent Electro-Thermo-Mechanical Analysis of AlN Passivation Effect on AlGaN/GaN HEMTs |
許健; Sheu, Gene; 蔡宗叡; Tsai, Jung-Ruey; 楊紹明; Yang, Shao-Ming |
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| [光電與通訊學系] 期刊論文 |
2011-11 |
Development of ESD Robustness Enhancement of a Novel 800V LDMOS Multiple RESURF with Linear P-top Rings |
蔡宗叡; Tsai, Jung-Ruey; 許健; Sheu, Gene; 楊紹明; Yang, Shao-Ming |
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| [光電與通訊學系] 期刊論文 |
2011-08 |
Improvement of Electrical Characteristics in LDMOS by the Insertion of PBL |
許健; Sheu, Gene; 蔡宗叡; Tsai, Jung-Ruey; 楊紹明; Yang, Shao-Ming |
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| [光電與通訊學系] 期刊論文 |
2011-08 |
Improvement of Electrical Characteristics in LDMOS by the Insertion of PBL and Gate Extended Field Plate Technologies |
許健; Sheu, Gene; 蔡宗叡; Tsai, Jung-Ruey; 楊紹明; Yang, Shao-Ming |
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| [光電與通訊學系] 期刊論文 |
2011-08 |
Application of Multi-Lateral Double Diffused Field Ring in Ultrahigh-Voltage Device MOS Transistor Design |
楊紹明; Yang, Shao-Ming; 許健; Sheu, Gene; 蔡宗叡; Tsai, Jung-Ruey |
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| [光電與通訊學系] 期刊論文 |
2011-08 |
Effects of SiO2 passivation on AlGaN/GaN HEMT by self-consistent electro-thermal-mechanical simulation |
楊紹明; Yang, Shao-Ming; 許健; Sheu, Gene; 蔡宗叡; Tsai, Jung-Ruey |
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| [光電與通訊學系] 期刊論文 |
2010-11 |
A 5V/200V SOI Device with a Vertically Linear Graded Drift Region |
楊紹明; Yang, Shao-Ming; 許健; Sheu, Gene; 蔡宗叡; Tsai, Jung-Ruey |
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| [國際企業學系] 期刊論文 |
2014-05 |
Optimization of NLDMOS Structure for Higher breakdown voltage and lower on-resistance |
hema; hema; 許健; Sheu, Gene; aryadeep; aryadeep; erry; erry; 楊紹明; Yang, Shao-Ming; chen, PA; chen, PA |
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| [國際企業學系] 期刊論文 |
2014-05 |
A Study of Interstitial Effect on UMOS Performance |
Hema E. P; 許健; Sheu, Gene; Aryadeep M; 楊紹明; Yang, Shao-Ming |
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| [國際企業學系] 期刊論文 |
2014-05 |
An Accurate Prediction for as-Implanted Doping Profile Calibration Using Different Ion Implantation |
Vivek; Vivek; pradahana; pradahana; 許健; Sheu, Gene; 王俊博; Subramaya; Subramaya; Amanullah; Amanullah; Sharma; Sharma; 楊紹明; Yang, Shao-Ming |
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| [國際企業學系] 期刊論文 |
2014-01 |
Optimization of SiC Schottky Diode using Linear P-top for Edge |
Mri, Aryadeep; Mrinal, Aryadeep; Kumar, Vijay; Vivek N, Man; Vivek N, Manjunatha M; 許健; Sheu, Gene; 楊紹明; Yang, Shao-Ming |
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| [國際企業學系] 期刊論文 |
2014-01 |
A Novel Ultra High Voltage Sidewall Implant Super Junction MOSFET Using Arsenic Implantation under Trench Bottom |
Kumar, Rahul; Kumar, Rahul; EmitaYulia, H; Hapsari, EmitaYulia; 許健; Sheu, Gene; 楊紹明; Yang, Shao-Ming; Anil Kumar; Anil Kumar TV |
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| [生物科技學系] 期刊論文 |
2016-04 |
AN EXPERIMENTAL AND ANALYTICAL METHOD TO OBSERVE THE POLYSILICON NANOWIRE MOSFET THRESHOLD VOLTAGE |
許健; Sheu, Gene; 楊紹明; Yang, Shao-Ming; *; Aanand; Aanand; Syed; Imam, Syed Sarwar; 范宗宸; Fan, Chung-Chen; Lu, Shao Wei; Lu, Shao Wei |
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| [生物科技學系] 期刊論文 |
2016 |
Silicon nanowire sensor for DNA biosensor applications |
李佳賢; Li, Chia-Hsien; *; Lu, Shao-Wei; Lu, Shao-Wei; Aanand; Aanand; Sarwar, Syed; Imam, Syed Sarwar; 楊紹明; Yang, Shao-Ming; 范宗宸; Fan, Chung-Chen; 許健; Sheu, Gene |
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| [資訊工程學系] 會議論文 |
2012-09 |
Characterization of NBTI by Evaluation of Hydrogen Amount in the Si/SiO2 Interface |
楊紹明; Yang, Shao-Ming; 許健; Sheu, Gene |
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| [資訊工程學系] 會議論文 |
2012-08 |
Analysis of LDMOS for Effect of Finger and Device-width on Gate Feedback |
楊紹明; Yang, Shao-Ming |
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| [資訊工程學系] 會議論文 |
2012-09 |
Characterization of NBTI by Evaluation of Hydrogen Amount in the Si/SiO2 Interface |
楊紹明; Yang, Shao-Ming; 許健; Sheu, Gene |
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| [資訊工程學系] 會議論文 |
2012-09 |
Failure Analysis of Power MOSFETs based on Multifinger Configuration under Unclamped Inductive |
楊紹明; Yang, Shao-Ming; 許健; Sheu, Gene |
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| [資訊工程學系] 會議論文 |
2012-08 |
Analysis of LDMOS for Effect of Finger and Device-width on Gate Feedback |
楊紹明; Yang, Shao-Ming; 許健; Sheu, Gene |
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| [資訊工程學系] 會議論文 |
2010-08 |
Optimizing NSCR ESD Protection Device for BCD 40V Technology |
楊紹明; Yang, Shao-Ming |
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| [資訊工程學系] 會議論文 |
2009-08 |
Dependence of Breakdown Voltage on Drift Length and Linear Doping Gradients in SOI RESURF LDMOS Devices |
楊紹明; Yang, Shao-Ming; 許健; Sheu, Gene |
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| [資訊工程學系] 期刊論文 |
2016-11 |
Ultra High Voltage Device RESURF LDMOS Technology on Drain- and Source-Centric Design Optimization |
楊紹明; Yang, Shao-Ming; *; Chen, Po-An; Chen, Po-An; Pan, CH; Pan, CH |
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| [資訊工程學系] 期刊論文 |
2016-05 |
EFFECT OF TIME AND TEMPERATURE ON EPITAXY GROWTH |
安南; Aanand; *; 許健; Sheu, Gene; 楊紹明; Yang, Shao-Ming; 賴, 秋 仲; Sarwar, Syed; Imam, Syed Sarwar |
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| [資訊工程學系] 期刊論文 |
2016-03 |
Effect of Time and Temperature on Epitaxy Growth |
Aanand; Aanand; 許健; Sheu, Gene; 楊紹明; Yang, Shao-Ming; *; 賴秋仲; Lai, Ciou-Jhong; Syed; Imam, Syed Sarwar |
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| [資訊工程學系] 期刊論文 |
2015-03 |
High Voltage NLDMOS with Multiple-RESURF Structure to Achieve Improved On-resistance |
楊紹明; Yang, Shao-Ming; *、Hema, EP; Hema, EP; Mri, Aryadeep; Mrinal, Aryadeep; 許健; Sheu, Gene; 陳柏安; Chen, PA |
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| [資訊工程學系] 期刊論文 |
2015-03 |
A HSPICE Macro Model for the ESD Behavior of Gate Grounded NMOS and Gate coupled NMOS |
楊紹明; Yang, Shao-Ming; Hema, EP; Hema, EP; 許健; Sheu, Gene; Mri, Aryadeep; Mrinal, Aryadeep; Md.Amanulla; Md.Amanullah; 陳柏安; Chen, PA |
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| [資訊工程學系] 期刊論文 |
2015-03 |
High Voltage NLDMOS with Multiple-RESURF Structure to Achieve Improved On-resistance |
楊紹明; Yang, Shao-Ming; Hema, EP; Hema, EP; Mri, Aryadeep; Mrinal, Aryadeep; 許健; Sheu, Gene; 陳柏安; Chen, PA |
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| [資訊工程學系] 期刊論文 |
2015-03 |
A HSPICE Macro Model for the ESD Behavior of Gate Grounded NMOS and Gate coupled NMOS |
楊紹明; Yang, Shao-Ming; Hema, EP; Hema, EP; 許健; Sheu, Gene; Mri, Aryadeep; Mrinal, Aryadeep; Md.Amanulla; Md.Amanullah; 陳柏安; Chen, PA |
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| [資訊工程學系] 期刊論文 |
2015-03 |
Negative e-beam resists using for nano-imprint lithography and silicone mold fabrication |
Anil Kumar,; Anil Kumar, T.V.; Shy, S.L; Shy, S.L; 許健; Sheu, Gene; 楊紹明; Yang, Shao-Ming; Chen, M.C.; Chen, M.C.; Hong, C.S.; Hong, C.S. |
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| [資訊工程學系] 期刊論文 |
2014-03 |
Investigation of Current Density and Hotspot Temperature Distribution Effects on P-channel LDMOSFET Unclamped Inductive Switching ;UIS) Test |
Kur, Erry Dwi; Kurniawan, Erry Dwi; Fra, Antonius; Ankit Kuma; Ankit Kumar; 楊紹明; Yang, Shao-Ming; 許健; Sheu, Gene |
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| [資訊工程學系] 期刊論文 |
2014-03 |
High Performance Gallium Nitride GAA Nanowire with 7nm diameter for Ultralow-Power Logic Applications |
Anil Kumar, T; Ch, Min-Cheng; Chen, Min-Cheng; 許健; Sheu, Gene; 楊紹明; Yang, Shao-Ming |
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| [資訊工程學系] 期刊論文 |
2014-03 |
A Low-cost 900V rated Multiple RESURF LDMOS Ultrahigh-Voltage Device MOS Transistor Design without EPI Layer |
Anil Kumar, T; 楊紹明; Yang, Shao-Ming; 許健; Sheu, Gene; Chen, P.A; Chen, P.A |
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| [資訊工程學系] 期刊論文 |
|
Process Integration of Best in Class Specific-on Resistance of 20V to 60V 0.18μm Bipolar CMOS DMOS Technology |
Yulia, Emita; Hapsari, Emita Yulia; Kumar, Rahul; Kumar, Rahul; 許健; Sheu, Gene; 楊紹明; Yang, Shao-Ming; Anil, T.V.; Anil, T.V. |
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| [資訊工程學系] 期刊論文 |
|
Optimization of SiC Schottky Diode using Linear P for Edge Termination |
Mri, Aryadeep; Mrinal, Aryadeep; Kumar, Vijay; Vivek, N; Vivek, N; Manjunatha, M; Manjunatha, M; 許健; Sheu, Gene; 楊紹明; Yang, Shao-Ming |
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| [資訊工程學系] 期刊論文 |
|
Effect of Trench Depth and Trench Angle in a High Voltage Polyflanked-Super junction MOSFET |
Kumar, Vijay; Srinat, Grama; Shreyas, Grama Srinath; Nidhi, Karuna; Nidhi, Karuna; Agarw, Neelam; Agarwal, Neelam; Kumar, Ankit; Kumar, Ankit; 許健; Sheu, Gene; 楊紹明; Yang, Shao-Ming; Mri, Aryadeep; Mrinal, Aryadeep |
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| [資訊工程學系] 期刊論文 |
|
Design of a low on resistance high voltage (<100V) novel 3D NLDMOS with side STI and single P-top layer based on 0.18um BCD Process Technology |
Kumar, Ankit; Kumar, Ankit; Yulia, Emita; Hapsari, Emita Yulia; Kuma, Vasanth; Kumar, Vasanth; Mri, Aryadeep; Mrinal, Aryadeep; 許健; Sheu, Gene; 楊紹明; Yang, Shao-Ming; Ningar, Vivek; Ningaraju, Vivek |
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| [資訊工程學系] 期刊論文 |
|
A Novel Ultra High Voltage Sidewall Implant Super Junction MOSFET Using Arsenic Implantation under Trench Bottom |
Kumar, Rahul; Kumar, Rahul; EmitaYulia, H; Hapsari, EmitaYulia; 許健; Sheu, Gene; 楊紹明; Yang, Shao-Ming; Anil Kumar, T |
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| [資訊工程學系] 期刊論文 |
|
Effects of Antimony and Arsenic Ion Implantation on High Performance of Ultra High Voltage Device |
Kum, Vasantha; Manjunatha, M; Manjunatha, M; Suresh, Vinay; Suresh, Vinay; 楊紹明; Yang, Shao-Ming; 許健; Sheu, Gene; 陳柏安; Chen, P A |
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| [資訊工程學系] 期刊論文 |
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Investigation of Substrate Resistance and Inductance on Deep Trench Capacitor for RF Application |
kumar, Vikash; kumar, Vikash; Aminul, Ashif; Aminulloh, Ashif; 楊紹明; Yang, Shao-Ming; 許健; Sheu, Gene |
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| [資訊工程學系] 期刊論文 |
|
P-type Shallow Junction as-Implanted Profile Prediction Using Kinetic Monte Carlo Simulation |
Fra, Antonius; Kur, Erry Dwi; Kurniawan, Erry Dwi; Manjunatha, M; Manjunatha, M.; 楊紹明; Yang, Shao-Ming; 許健; Sheu, Gene |
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| [資訊工程學系] 期刊論文 |
|
Ron Improvement with Duplex Conduction Channel |
Manjunatha; Manjunatha; Vasanth; Vasanth; kumar, anil; kumar, anil; Kumar, Jaipal; Kumar, Jaipal; 楊紹明; Yang, Shao-Ming; 許健; Sheu, Gene; 陳柏安; P.A.Chen |
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| [資訊工程學系] 期刊論文 |
|
Unclamped Inductive Switching Stress Failure Mechanism of LDMOS |
Kumar, Vijay; Srinat, Grama; Shreyas, Grama Srinath; Khau, Chinmoy; Khaund, Chinmoy; Agarw, Neelam; Agarwal, Neelam; Nidhi, Karuna; Nidhi, Karuna; 楊紹明; Yang, Shao-Ming; 許健; Sheu, Gene |
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| [資訊工程學系] 期刊論文 |
|
Verification of Ruggedness and Failure in LDMOS |
Chinmoy; Chinmoy; Shreyas; Shreyas; Kumar, Vijay; Kumar, Vijay; Neelam; Neelam; 楊紹明; Yang, Shao-Ming; 許健; Sheu, Gene |
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| [資訊工程學系] 期刊論文 |
|
Accurate equivalent circuit model of deep trench capacitor by numerical simulation and analytical calculation |
Fathna, Ashif; Fathna, Ashif; kumar, Vikash; kumar, Vikash; 楊紹明; Yang, Shao-Ming; 許健; Sheu, Gene |
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| [資訊工程學系] 期刊論文 |
|
Novel structure of deep trench capacitor with higher breakdown and higher capacitance density for Low Dropout Voltage regulator |
Fathna, Ashif; Fathna, Ashif; kumar, Vikash; kumar, Vikash; 楊紹明; Yang, Shao-Ming; 許健; Sheu, Gene |
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| [資訊工程學系] 期刊論文 |
2013-10 |
A Novel Ultra High Voltage Sidewall Implant Super Junction MOSFET Using Arsenic Implantation under Trench Bottom |
Kumar, Rahul; Kumar, Rahul; EmitaYulia, H; Hapsari, EmitaYulia; 許健; Sheu, Gene; 楊紹明; Yang, Shao-Ming; Anil Kumar, T |
|
| [資訊工程學系] 期刊論文 |
2013-10 |
Effect of Trench Depth and Trench Angle in a High Voltage Polyflanked-Super junction MOSFET |
Kumar, Vijay; Srinat, Grama; Shreyas, Grama Srinath; Nidhi, Karuna; Nidhi, Karuna; Agarw, Neelam; Agarwal, Neelam; Kumar, Ankit; Kumar, Ankit; 許健; Sheu, Gene; 楊紹明; Yang, Shao-Ming; Mri, Aryadeep; Mrinal, Aryadeep |
|
| [資訊工程學系] 期刊論文 |
2013-10 |
Optimization of SiC Schottky Diode using Linear P for Edge Termination |
Mri, Aryadeep; Aryadeep Mrinal,; Kumar, Vijay; Vijay Kumar M P,; Vivek N,; Vivek N,; Manjunatha, M; Manjunatha M,; 許健; Sheu, Gene; 楊紹明; Yang, Shao-Ming |
|
| [資訊工程學系] 期刊論文 |
2013-10 |
Process Integration of Best in Class Specific-on Resistance of 20V to 60V 0.18μm Bipolar CMOS DMOS Technology |
Yulia, Emita; Hapsari, Emita Yulia; Kumar, Rahul; Kumar, Rahul; 許健; Sheu, Gene; 楊紹明; Yang, Shao-Ming; Anil, T.V.; Anil, T.V. |
|
| [資訊工程學系] 期刊論文 |
2013-06 |
Ron Improvement with Duplex Conduction Channel |
Manjunatha; Manjunatha; Vasanth; Vasanth; kumar, anil; kumar, anil; Kumar, Jaipal; Kumar, Jaipal; 楊紹明; Yang, Shao-Ming; 許健; Sheu, Gene; 陳柏安; P.A.Chen |
|
| [資訊工程學系] 期刊論文 |
2013-06 |
Verification of Ruggedness and Failure in LDMOS |
Chinmoy; Chinmoy; Shreyas; Shreyas; Kumar, Vijay; Kumar, Vijay; Neelam; Neelam; 楊紹明; Yang, Shao-Ming; 許健; Sheu, Gene |
|
| [資訊工程學系] 期刊論文 |
2013-06 |
Investigation in characteristics of 1200V Vertical IGBT for different trench designs |
Anil Kumar, P; Anil Kumar, P; Suresh, Vinay; Vinay Suresh,; 楊紹明; Yang, Shao-Ming; 許健; Sheu, Gene |
|
| [資訊工程學系] 期刊論文 |
2013-02 |
Accurate equivalent circuit model of deep trench capacitor by numerical simulation and analytical calculation |
Fathna, Ashif; Fathna, Ashif; kumar, Vikash; kumar, Vikash; 楊紹明; Yang, Shao-Ming; 許健; Sheu, Gene |
|
| [資訊工程學系] 期刊論文 |
2013-02 |
Novel structure of deep trench capacitor with higher breakdown and higher capacitance density for Low Dropout Voltage regulator |
Fathna, Ashif; Fathna, Ashif; kumar, Vikash; kumar, Vikash; 楊紹明; Yang, Shao-Ming; 許健; Sheu, Gene |
|
| [資訊工程學系] 期刊論文 |
2012-09 |
Optimization of ESD Protection Device Using SCR |
楊紹明; Yang, Shao-Ming; 許健; Sheu, Gene |
|
| [資訊工程學系] 期刊論文 |
2012-08 |
Optimization of ESD Protection Device Using SCR Structure of a Novel STI-sided LDMOS with P-top Layer for 5 V Operating Voltage |
許健; Sheu, Gene; 楊紹明; Yang, Shao-Ming |
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| [資訊工程學系] 期刊論文 |
2011-07 |
An 800 Volts High Voltage Interconnection Level |
許健; Sheu, Gene; 楊紹明; Yang, Shao-Ming |
|
| [資訊工程學系] 期刊論文 |
2011 |
A Novel 800V Multiple RESURF LDMOS Utilizing |
許健; Sheu, Gene; 楊紹明; Yang, Shao-Ming |
|
| [資訊工程學系] 期刊論文 |
2010-11 |
A Novel 800V Multiple RESURF LDMOS Utilizing Linear P-top Rings |
許健; Sheu, Gene; 楊紹明; Yang, Shao-Ming |
|
| [資訊工程學系] 期刊論文 |
2010-11 |
An 800 Volts High Voltage Interconnection Level Shifter Using Floating Poly Field Plate (FPFP) Method |
許健; Sheu, Gene; 楊紹明; Yang, Shao-Ming |
|
| [資訊工程學系] 期刊論文 |
2010-10 |
ESD Simulation on GGNMOS for 40V BCD |
許健; Sheu, Gene; 楊紹明; Yang, Shao-Ming |
|
| [資訊工程學系] 期刊論文 |
2010-07 |
An Analytical Model of Surface Electric Field Distributionsin in Ultrahigh-Voltage Metal–Oxide–Semiconductor Devices |
許健; Sheu, Gene; 楊紹明; Yang, Shao-Ming |
|
| [資訊工程學系] 期刊論文 |
2010-07 |
An Analytical Model of Surface Electric Field Distributions in Ultrahigh-Voltage Buried P-top Lateral Diffused Metal-Oxide-Semiconductor Devices |
許健; Sheu, Gene; 楊紹明; Yang, Shao-Ming; 張怡楓; Chang, Yi-Fong; 曹世昌; Tsaur, Shyh-Chang |
|
| [資訊工程學系] 期刊論文 |
2010-03 |
Combining 2D and 3D Device Simulations for Optimizing LDMOS Design |
許健; Sheu, Gene; 楊紹明; Yang, Shao-Ming |
|
| [資訊工程學系] 期刊論文 |
2010-03 |
Reduction of Kink Effect in SOI LDMOS Structure with Linear Drift Region Thickness |
許健; Sheu, Gene; 楊紹明; Yang, Shao-Ming |
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| [資訊工程學系] 期刊論文 |
2010-03 |
Comparison of High Voltage (200-300 Volts) Lateral Power MOSFETs for Power Integrated Circuits |
許健; Sheu, Gene; 楊紹明; Yang, Shao-Ming; 陳兆南 |
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| [資訊工程學系] 期刊論文 |
2009-08 |
Dependence of Breakdown Voltage on Drift Length and Linear Doping Gradients in SOI RESURF LDMOS Devices |
楊紹明; Yang, Shao-Ming; 許健; Sheu, Gene |
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| [資訊工程學系] 期刊論文 |
2009-01 |
A High Performance 80V Smart LDMOS Power Device Based on Thin SOI Technology |
許健; Sheu, Gene; 楊紹明; Yang, Shao-Ming |
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| [資訊工程學系] 期刊論文 |
2009 |
Reduced Kink Effect in An SOI LDMOS Structure with Graded Drift Region Thickness |
許健; Sheu, Gene; 楊紹明; Yang, Shao-Ming |
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| [資訊工程學系] 期刊論文 |
2009 |
An Analytical Model for Surface Electric Field Distributions in Ultra High Voltage (800V) Buried P-top LDMOS Devices |
許健; Sheu, Gene; 楊紹明; Yang, Shao-Ming; 曹世昌; Tsaur, Shyh-Chang |
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| [資訊工程學系] 期刊論文 |
2009 |
Comparison of High Voltage (200-300 Volts) Devices for Power Integrated Circuits |
許健; Sheu, Gene; 楊紹明; Yang, Shao-Ming; 曹世昌; Tsaur, Shyh-Chang |
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| [資訊工程學系] 期刊論文 |
2009 |
The Reliability of 200V P-channel Silicon-On-Insulator LDMOS on High Side operation |
楊紹明; Yang, Shao-Ming; 許健; Sheu, Gene |
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| [資訊工程學系] 期刊論文 |
2008 |
Nanocrystallization and interfacial tension of sol-gel derived memory |
Wu, Chi-Chang; Tsai, Yi-Jen; Chu, Min-Ching; Yang, Shao-Ming; Ko, Fu-Hsiang; Liu, Pin-Lin; Yang, Wen-Luh; You, Hsin-Chiang |
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